Defect-Mediated Lattice Relaxation and Domain Stability in Ferroelectric Oxides
نویسندگان
چکیده
منابع مشابه
Experimental and first-principles study of point defects, domain walls, and point-defect/domain-wall interactions in ferroelectric oxides
Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the crystal lattice having different directions of polarization are separated by nano-scale interfaces known as domainwalls. These interfaces, which c...
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The cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [I, 2]. Point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. The method of representation matrices is extended to make it applicable to represent and enumerate ...
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This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these ...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2012
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.109.117601